TGS2355 - 0.5-6GHz High Power GaN Switch

TriQuint Semiconductor

General Description

The TGS2355 is a single-pole, double-throw (SPDT) reflective switch fabricated on TriQuint’s 0.25um GaN on SiC production process.

Key Features

Frequency Range: 0.5 - 6 GHz Insertion Loss: < 1.3 dB Power Handling: 100 W Isolation: 40 dB typical Control Voltages: 0 V/-40 V from either side of the MMIC.
Reflective Switch.
Chip Dimensions: 2.14 x 2.50 x 0.1 mm.
Functional Block Diagram General.

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TGS2355 0.5-6ghz high power gan switch by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	TGS2355
Manufacturer	TriQuint Semiconductor
File Size	703.08 KB
Description	0.5-6GHz High Power GaN Switch
Datasheet	TGS2355 Datasheet

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Other Datasheets by TriQuint Semiconductor

Part Number	Description
TGS2355-SM	0.5-6GHz 100Watt GaN Switch
TGS2351	DC - 6 GHz High Power GaN SPDT Switch
TGS2351-SM	DC - 6 GHz High Power GaN SPDT Switch
TGS2352	DC - 12 GHz High Power GaN SPDT Switch
TGS2353	DC - 18 GHz High Power GaN SPDT Switch

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TGS2355 0.5-6 GHz High Power GaN Switch Applications • High Power Switching Product Features Frequency Range: 0.5 - 6 GHz Insertion Loss: < 1.3 dB Power Handling: 100 W Isolation: 40 dB typical Control Voltages: 0 V/-40 V from either side of the MMIC • Reflective Switch • Chip Dimensions: 2.14 x 2.50 x 0.1 mm • • • • • Functional Block Diagram General Description The TGS2355 is a single-pole, double-throw (SPDT) reflective switch fabricated on TriQuint’s 0.25um GaN on SiC production process. Operating from 0.5 to 6 GHz, the TGS2355 provides up to 100 W input power handling with < 1 dB insertion over most of the operating band and greater than 40 dB isolation. The TGS2355 is available in a small 2.14 x 2.