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TQ9147B - 2-Stage AMPS Power Amplifier IC

Description

The TQ9147 is a high efficiency two stage GaAs MESFET power amplifier IC intended for use in AMPS (IS-19) applications that operate in the US Cellular (824 849 MHz) band.

The TQ9147 requires minimal external RF circuitry and operates from a 4.8-Volt supply.

Features

  • High Efficiency.
  • +32 dBm Output Power.
  • 50Ω Matched Input.
  • SO-16 Plastic Package.
  • Monolithic Power Amp 7 10 8 9 Product.

📥 Download Datasheet

Datasheet Details

Part number TQ9147B
Manufacturer TriQuint Semiconductor
File Size 232.68 KB
Description 2-Stage AMPS Power Amplifier IC
Datasheet download datasheet TQ9147B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WIRELESS COMMUNICATIONS DIVISION RFOUT GND GND GND GND RFIN GND VG1 1 16 RFOUT GND GND GND GND VG2 GND VD1 TQ9147B DATA SHEET 2 15 3 14 2-Stage AMPS Power Amplifier IC 4 13 5 12 6 11 Features §High Efficiency §+32 dBm Output Power §50Ω Matched Input §SO-16 Plastic Package §Monolithic Power Amp 7 10 8 9 Product Description The TQ9147 is a high efficiency two stage GaAs MESFET power amplifier IC intended for use in AMPS (IS-19) applications that operate in the US Cellular (824 849 MHz) band. The TQ9147 requires minimal external RF circuitry and operates from a 4.8-Volt supply. With its flexible, off-chip, single component output matching circuit, the TQ9147 is suitable for use in other applications near the cellular band, such as 900 MHz ISM applications.
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