TQ9147B Datasheet | TriQuint Semiconductor

WIRELESS MUNICATIONS DIVISION RFOUT GND GND GND GND RFIN GND VG1 RFOUT GND GND GND GND VG2 GND VD1 DATA SHEET 2-Stage AMPS Power Amplifier IC Features - High Efficiency - +32 dBm Output Power - 50Ω Matched Input - SO-16 Plastic Package - Monolithic Power Amp Product Description The TQ9147 is a high efficiency two stage GaAs MESFET power amplifier IC intended for use in AMPS (IS-19) applications that operate in the US Cellular (824 849 MHz) band. The TQ9147 requires minimal external RF circuitry and operates from a 4.8-Volt supply. With its flexible, off-chip, single ponent output matching circuit, the TQ9147 is suitable...