TQHBT Datasheet | TriQuint Semiconductor

Features Metal 2 - 4um - - - - - Dielectric Metal 1 - 2um Dielectric Emitter Metal 1 - 2um .. Ni Cr MIM Metal 0 Base Collector - Sub Collector Isolation Implant Buffer & Substrate - - - - - - - TQHBT Process Cross-Section General Description Tri Quint’s TQHBT process is a highly reliable In Ga P HBT process with three levels of interconnecting metal. Thick metal interconnects and high quality passives promote integration. The thick metal interconnects, which promote enhanced thermal management, and high density capacitors keep die sizes small. MOCVD epitaxial processes are utilized to grow the active layers. A carbon-doped Base and In Ga P Emitter are utilized for high RF performance consistent with high reliability. Precision Ni Cr resistors and high value MIM capacitors are included. The three metal layers are encapsulated in a high performance dielectric that allows wiring flexibility and plastic packaging simplicity. In Ga P Emitter Process for High Reliability and Thermal Stability Base Etch Stop for Uniformity MOCVD Epitaxy High Linearity in PA applications High Density Interconnects; - 2 Global, 1 Local - Over 6 µm Total Thickness - Dielectric Encapsulated Metals Thick Metal Interconnects: - Enhanced Thermal Management - Minimum Die Size Effective Base Ballasting for Maximum Gain 150 mm Wafers High-Q Passives Ni Cr Thin Film Resistors High Value Capacitors Backside Vias Optional Validated Models and Design Support Applications - - - - - - Power Amplifiers Driver Amplifiers Wideband, General Purpose Amplifiers Gilbert Cell Mixers VCOs Single Supply and Easy Biasing Tri Quint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for munications .triquint. Page 1 of 5; Rev 2.1 8/10/02 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint. Production Process In Ga P HBT Foundry...