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TQHBT - 100UA Gain Selectable Amplifier

Description

TriQuint’s TQHBT process is a highly reliable InGaP HBT process with three levels of interconnecting metal.

Thick metal interconnects and high quality passives promote integration.

Features

  • Metal 2 - 4um TQHBT.
  • Dielectric Metal 1 - 2um Dielectric E Emitter Metal 1 - 2um www. DataSheet4U. com B C B C NiCr MIM Metal 0 Base Collector.
  • Sub Collector Isolation Implant Buffer & Substrate.
  • TQHBT Process Cross-Section General.

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Datasheet Details

Part number TQHBT
Manufacturer TriQuint Semiconductor
File Size 291.20 KB
Description 100UA Gain Selectable Amplifier
Datasheet download datasheet TQHBT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production Process InGaP HBT Foundry Service Features Metal 2 - 4um TQHBT • • • • • Dielectric Metal 1 - 2um Dielectric E Emitter Metal 1 - 2um www.DataSheet4U.com B C B C NiCr MIM Metal 0 Base Collector • Sub Collector Isolation Implant Buffer & Substrate • • • • • • • TQHBT Process Cross-Section General Description TriQuint’s TQHBT process is a highly reliable InGaP HBT process with three levels of interconnecting metal. Thick metal interconnects and high quality passives promote integration. The thick metal interconnects, which promote enhanced thermal management, and high density capacitors keep die sizes small. MOCVD epitaxial processes are utilized to grow the active layers.
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