TQHIP Datasheet | TriQuint Semiconductor

Features - - Metal 1 Metal 1 - 2 um MIM Metal Ni Cr Metal 0 .. N+ N+ Isolation Implant N-/P- Channel - - - - - D MESFET MIM Capacitor Semi-Insulating Ga As Substrate Ni Cr Resistor Power MESFET Process Interconnects: - 2 Global (one airbridge) - 1 Local High-Q Passives Bulk & Thin Film Resistors Backside Vias Optional High Volume Production Processes Validated Models and Design Support TQHi P Process Cross-Section Applications - - - - - - General Description Tri Quint’s TQHi P process is our robust, high power density MESFET process. It provides a straight-forward, low cost process for a variety of circuits and applications. Its high operating and breakdown voltages make it ideal for wireless or wired infrastructure applications. A thick (4 µm) gold airbridge plements the 2 µm thick gold global metal and 0.5 µm thick gold surface layer for wiring flexibility and interconnect density. Precision Ni Cr resistors and high value MIM capacitors are included. Power Amplifiers Switches Frequencies thru X-Band Base Station Driver Amplifiers CATV Line Amplifiers Cellular Power Amps, Drivers, Switches Tri Quint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for munications .triquint. Page 1 of 4; Rev 2.1 4/30/02 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint. Production Process Power MESFET Foundry Service TQHi P TQHi P Process Details TQHi P Process Details Element D-FET Vp Gate Length Idss Parameter Value -2.3 0.5 245 370 16.5 60 140 9 14 18 3 600 50 800 25 Yes No Vias With Vias 14 16 -65 to +150 40 25 ºC V V p F/mm2 Ohms/sq Ohms/sq @ 2 GHz Units V um m A/mm m A/mm GHz GHz m S/mm V V V .. Imax Ft @ 50% Idss Fmax Gm BVgso, Typical BVgdo, Typical BVds, Typical Interconnect MIM Caps Resistors Metal Layers Values Ni Cr Bulk Inductors Vias Mask Layers...