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TQHIP - 100UA Gain Selectable Amplifier

Description

TriQuint’s TQHiP process is our robust, high power density MESFET process.

It provides a straight-forward, low cost process for a variety of circuits and applications.

Its high operating and breakdown voltages make it ideal for wireless or wired infrastructure applications.

Features

  • Metal 1 Metal 1.
  • 2 um MIM Metal NiCr Metal 0 www. DataSheet4U. com N+ N+ Isolation Implant N-/P- Channel.
  • D MESFET MIM Capacitor Semi-Insulating GaAs Substrate NiCr Resistor Power MESFET Process Interconnects:.
  • 2 Global (one airbridge).
  • 1 Local High-Q Passives Bulk & Thin Film Resistors Backside Vias Optional High Volume Production Processes Validated Models and Design Support TQHiP Proces.

📥 Download Datasheet

Datasheet Details

Part number TQHIP
Manufacturer TriQuint Semiconductor
File Size 147.51 KB
Description 100UA Gain Selectable Amplifier
Datasheet download datasheet TQHIP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production Process Power MESFET Foundry Service TQHiP Air Bridge - 4um Features • • Metal 1 Metal 1 – 2 um MIM Metal NiCr Metal 0 www.DataSheet4U.com N+ N+ Isolation Implant N-/P- Channel • • • • • D MESFET MIM Capacitor Semi-Insulating GaAs Substrate NiCr Resistor Power MESFET Process Interconnects: • 2 Global (one airbridge) • 1 Local High-Q Passives Bulk & Thin Film Resistors Backside Vias Optional High Volume Production Processes Validated Models and Design Support TQHiP Process Cross-Section Applications • • • • • • General Description TriQuint’s TQHiP process is our robust, high power density MESFET process. It provides a straight-forward, low cost process for a variety of circuits and applications.
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