Datasheet4U Logo Datasheet4U.com

TQM7M4014 - 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module

Description

Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications.

The small size and high performance is achieved with high-reliability InGaP HBT technology.

The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports.

Features

  • Very compact size.
  • 10×7×1.4 mm3.
  • High efficiency.
  • typical GSM850 47%, GSM900 56%, DCS 51%, PCS 50%.
  • Positive supply voltage.
  • 2.9 to 4.5 V.
  • 50 Ω input and output impedances.
  • GPRS class 12 compatible.
  • CMOS band select and internal closed-loop power control.
  • High-reliability InGaP technology.
  • Ruggedness 10:1.
  • Few external components.

📥 Download Datasheet

Datasheet preview – TQM7M4014

Datasheet Details

Part number TQM7M4014
Manufacturer TriQuint Semiconductor
File Size 251.26 KB
Description 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Datasheet download datasheet TQM7M4014 Datasheet
Additional preview pages of the TQM7M4014 datasheet.

📁 Similar Datasheet

Other Datasheets by TriQuint Semiconductor
  • TQM7M4012 - 3V QUAD - BRAND GSM850/900 DCS/PCS POWER AMPLIFIER MODULE
  • TQM7M4006 - 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
  • TQM7M4007 - Quad-Band GSM / GPRS Power Amplifier Module
  • TQM7M4022 - 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module
  • TQM7M5002 - Quad-Band GSM/EDGE Polar Power Amplifier Module
  • TQM7M5003 - Quad-Band GSM/EDGE Polar Power Amplifier Module
  • TQM7M5004 - GSM/EDGE Multi-mode Power Amplifier Module
  • TQM7M5005 - GSM/EDGE Multi-mode Power Amplifier Module

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com TQM 7M4014 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Package Outline: Description: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. It includes internal closed-loop power control. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. TQS 7M4014 C352 0301 A213505 Features: • Very compact size – 10×7×1.4 mm3. • High efficiency – typical GSM850 47%, GSM900 56%, DCS 51%, PCS 50%. • Positive supply voltage – 2.9 to 4.5 V.
Published: |