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TQM7M5013 - Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module

Description

The TQM7M5013 is an input power controlled, multiple gain state, quad band, GSM/EDGE PAM designed for use with the Qualcomm QTR/RTR8600 WEDGE solutions.

This highly efficient PAM significantly improves talk-time while still providing an easy to use solution in a small form factor.

Features

  • Digital Control Interface.
  • Low Current At Backed-Off Power Levels.
  • Input Power Controlled.
  • GMSK & 8PSK.
  • LB Has 4 modes.
  • HP, MP, LP, & ULP.
  • HB Has 3 modes.
  • HP, LP, & ULP.
  • HBT/PHEMT High Efficiency Technology.
  • High.
  • Power Linearity.
  • Standard LB & HB Paths.
  • 50 Ω Input & Output Impedance.
  • Halogen-Free.
  • 11 Pin Package General.

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Datasheet preview – TQM7M5013

Datasheet Details

Part number TQM7M5013
Manufacturer TriQuint Semiconductor
File Size 225.57 KB
Description Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module
Datasheet download datasheet TQM7M5013 Datasheet
Additional preview pages of the TQM7M5013 datasheet.

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Full PDF Text Transcription

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TQM7M5013 Quad-Band Input Power Controlled EDGE PAM Applications • Quad-Band GSM850 / GSM900 / DCS / PCS • GSM / EDGE / WEDGE Handsets • GSM / EDGE / WEDGE Wireless Cards Product Features • Digital Control Interface • Low Current At Backed-Off Power Levels • Input Power Controlled – GMSK & 8PSK • LB Has 4 modes – HP, MP, LP, & ULP • HB Has 3 modes – HP, LP, & ULP • HBT/PHEMT High Efficiency Technology • High–Power Linearity • Standard LB & HB Paths • 50 Ω Input & Output Impedance • Halogen-Free • 11 Pin Package General Description The TQM7M5013 is an input power controlled, multiple gain state, quad band, GSM/EDGE PAM designed for use with the Qualcomm QTR/RTR8600 WEDGE solutions.
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