TQPED Datasheet | TriQuint Semiconductor

Features Metal 2 Dielectric Metal 2 - 4um - - - - - Dielectric Metal 1 - 2um Metal 1 Metal 1 Dielectric MIM Metal Ni Cr Nitride N+ Pseudomorphic Channel Metal 0 Isolation Implant Isolation Implant MIM Capacitor Ni Cr Resistor E-Mode / D-Mode p HEMT Semi-Insulating Ga As Substrate - - - - - - 0.5 um p HEMT Device Cross-Section .. E-Mode, 0.35 V, Vth D-Mode, -0.8 V Vp In Ga As Active Layer p HEMT Process 0.5 um Optical Lithography Gates High Density Interconnects: - 2 Global - 1 Local High-Q Passives Thin Film Resistors High Value Capacitors Backside Vias Optional Based on Production TQPHT p HEMT and Interconnect Nominal TOM3 FET Models Available General Description Tri Quint’s TQPED process is based on our production-released 0.5 µm TQPHT process. TQPED partners an E-Mode p HEMT device with our TQPHT D-Mode transistors to be the first foundry p HEMT process to integrate E-Mode and D-Mode transistors on the same wafer. This process is targeted for low noise amplifiers, linear, low loss and high isolation RF switch applications, converters and integrated RF Front Ends. The TQPED process offers a D-Mode p HEMT with a - 0.8 V pinch off, and an E-Mode p HEMT with a +0.35 V threshold voltage. The three metal interconnecting layers are encapsulated in a high performance dielectric that allows wiring flexibility, optimized die size and plastic packaging simplicity. Precision Ni Cr resistors and high value MIM capacitors are included allowing higher levels of integration, while maintaining smaller, cost - effective die sizes. Applications - - - - - - - Highly Efficient, and Linear Power Amplifiers Low Loss, High Isolation, Low Harmonic Contnt Switches Integrated digital control logic for Switches and Transceivers Converters Integrated RF Front Ends- LNA, SW, PA Wireless Transceivers, Base stations, Direct Broadcast Satellite Radars, Digital Radios, RF / Mixed Signal ICs Power Detectors and Couplers Production Release: Q1’2005 Page 1 of 3; Rev 1.0 12/1/2004 Pre-Produc...