Datasheet Details
| Part number | TQPED |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 128.69 KB |
| Description | 100UA Gain Selectable Amplifier |
| Datasheet | TQPED_TriQuintSemiconductor.pdf |
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Overview: Pre-Production Process 0.5 um E/D pHEMT Foundry Service.
| Part number | TQPED |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 128.69 KB |
| Description | 100UA Gain Selectable Amplifier |
| Datasheet | TQPED_TriQuintSemiconductor.pdf |
|
|
|
TriQuint’s TQPED process is based on our production-released 0.5 µm TQPHT process.
TQPED partners an E-Mode pHEMT device with our TQPHT D-Mode transistors to be the first foundry pHEMT process to integrate E-Mode and D-Mode transistors on the same wafer.
This process is targeted for low noise amplifiers, linear, low loss and high isolation RF switch applications, converters and integrated RF Front Ends.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TQP369182 | Gain Block | Qorvo |
|
TQP369184 | Gain Block | Qorvo |
|
TQP3M9006 | High Linearity LNA Gain Block | Qorvo |
|
TQP3M9008 | High Linearity LNA Gain Block | Qorvo |
|
TQP3M9009 | High Linearity LNA Gain Block | Qorvo |
| Part Number | Description |
|---|---|
| TQP0102 | GaN Power Transistor |
| TQP0103 | GaN Power Transistor |
| TQP0104 | GaN Power Transistor |
| TQP13-N | 0.13 um D pHEMT Foundry Service |
| TQP15 | 0.15 um D-mode pHEMT Foundry Service |
| TQP200002 | ESD Protection Circuit |
| TQP2420B | ISM Band InGaP HBT Power Amplifier |
| TQP2420G | ISM Band InGaP HBT Power Amplifier |
| TQP369180 | DC-6 GHz Gain Block |
| TQP369181 | DC-6 GHz Gain Block |