Datasheet Details
| Part number | TQPED |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 128.69 KB |
| Description | 100UA Gain Selectable Amplifier |
| Datasheet |
 TQPED Datasheet
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Description
TriQuint’s TQPED process is based on our production-released 0.5 µm TQPHT process.
TQPED partners an E-Mode pHEMT device with our TQPHT D-Mode transistors to be the first foundry pHEMT process to integrate E-Mode and D-Mode transistors on the same wafer.
Features
- Metal 2 Dielectric Metal 2 - 4um TQPED.
- Dielectric Metal 1 - 2um Metal 1 Metal 1 Dielectric MIM Metal NiCr Nitride N+ Pseudomorphic Channel Metal 0 Isolation Implant Isolation Implant MIM Capacitor NiCr Resistor E-Mode / D-Mode pHEMT Semi-Insulating GaAs Substrate.
- 0.5 um pHEMT Device Cross-Section www. DataSheet4U. com E-Mode, 0.35 V, Vth D-Mode, -0.8 V Vp InGaAs Active Layer.