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TQPHT - pHEMT Foundry Service

Description

TriQuint’s 0.5 µm pHEMT process is based on our production released 0.25 µm gate process.

TQPHT substitutes lower cost optical lithography in place of e-beam and adds TriQuint’s unique thick metal scheme.

Features

  • Metal 2 Dielectric Metal 1 Dielectric MIM Metal Metal 2 - 4um Dielectric Metal 1 - 2um.
  • Metal 1 NiCr Isolation Implant Isolation Implant Nitride N+ Pseudomorphic Channel Metal 0 pHEMT MIM Capacitor Semi-Insulating GaAs Substrate NiCr Resistor.
  • 0.5 um pHEMT Device Cross-Section www. DataSheet4U. com D-Mode, -0.8 V Vp InGaAs Active Layer pHEMT Process 0.5 um Optical Lithography Gat.

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Datasheet Details

Part number TQPHT
Manufacturer TriQuint Semiconductor
File Size 236.99 KB
Description pHEMT Foundry Service
Datasheet download datasheet TQPHT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production Process TQPHT 0.5 um pHEMT Foundry Service Features Metal 2 Dielectric Metal 1 Dielectric MIM Metal Metal 2 - 4um Dielectric Metal 1 - 2um • • • • • Metal 1 NiCr Isolation Implant Isolation Implant Nitride N+ Pseudomorphic Channel Metal 0 pHEMT MIM Capacitor Semi-Insulating GaAs Substrate NiCr Resistor • • • • • • 0.5 um pHEMT Device Cross-Section www.DataSheet4U.com D-Mode, -0.8 V Vp InGaAs Active Layer pHEMT Process 0.5 um Optical Lithography Gates 17 V D-G Breakdown Voltage High Density Interconnects: • 2 Global • 1 Local High-Q Passives Thin Film Resistors High Value Capacitors Backside Vias Optional Based on Production 0.25 µm pHEMT and Passives Processes TOM3 FET Models Available General Description TriQuint’s 0.
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