TriQuint Semiconductor TQPHT
The TQPHT process offers a D-Mode pHEMT with a –0.8 V pinch off. The three metal interconnecting layers are encapsulated in a high performance dielectric that allows wiring flexibility, optimized die size and plastic packaging simplicity.| Part No. | TQPHT |
|---|---|
| Datasheet | TQPHT Download |
| Manufacturer |  TriQuint Semiconductor |
| Description | pHEMT Foundry Service |
| Buy | Stock & Price |
FEATURES
Metal 2 Dielectric Metal 1 Dielectric MIM Metal Metal 2 - 4um Dielectric Metal 1 - 2um●
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● Metal 1 NiCr Isolation Implant Isolation Implant Nitride N+ Pseudomorphic Channel Metal 0 pHEMT MIM Capacitor Semi-Insulating GaAs Substrate NiCr Resistor
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● 0.5 um pHEMT Device Cross-Section D-Mode, -0.8 V Vp InGaAs Active Layer pHEMT Process 0.5 um Optical Lithography Gates 17 V D-G Breakdown Voltage High Density Interconnects:
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● 1 Local High-Q Passives Thin Film Resistors High Value Capacitors Backside Vias Optional Based on Production 0.25 µm pHEMT and Passives Processes TOM3 FET Models Available
GENERAL DESCRIPTION
TriQuint’s 0.5 µm pHEMT process is based on our production released 0.25 µm gate process. TQPHT substitutes lower cost optical lithography in place of e-beam and adds TriQuint’s unique thick metal scheme. This process is targeted for high efficiency and linearity in power amplifiers, low noise amplifiers, and linear, low loss and high isolation RF switch applications.
