TGF2023-2-20 Key Features
- Frequency Range: DC
- 18 GHz 50.5 dBm Nominal PSAT at 3 GHz 70.5% Maximum PAE 19.2 dB Nominal Power Gain at 3 GHz Bias: VD = 12
- 32 V, IDQ = 400
- 2000 mA Technology: TQGaN25 on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 mm
- Part: TGF2023-2-20
- Description: 90 Watt Discrete Power GaN on SiC HEMT
- Manufacturer: TriQuint
- Size: 1.45 MB
Other TGF2023-2-20 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Qorvo |
TGF2023-2-20 | SiC HEMT |