TSD5N60S - N-Channel MOSFET

Product Overview

Truesemi

Datasheet Details

Part number	TSD5N60S
Manufacturer	Truesemi
File Size	926.04 KB
Description	N-Channel MOSFET
Datasheet	TSD5N60S Datasheet
Additional preview pages of the TSD5N60S datasheet.

Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

650V @TJ = 150 ℃.
Typ. RDS(on) = 0.77Ω.
Ultra Low Gate Charge (typ. Qg = 15nC).
100% avalanche tested.
Rohs Compliant Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSD5N60S 5.
4.5.
IDM Drain Current - Pulsed (Note 1) 20.
VGSS Gate-Source voltage EAS Single Pulsed Avalanche.

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Published: Apr 13, 2017 |