TSF20N50M - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSF20N50M
Manufacturer	Truesemi
File Size	526.90 KB
Description	N-Channel MOSFET
Datasheet	TSF20N50M Datasheet
Additional preview pages of the TSF20N50M datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

20A,500V,Max. RDS(on)=0.26Ω @ VGS =10V.
Low gate charge(typical 45nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (L=0.4mH) Power Dissipation (TC = 25℃) Operating a.

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Published: Apr 13, 2017 |