TSF20N50M
Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- 20A,500V,Max.RDS(on)=0.26Ω @ VGS =10V
- Low gate charge(typical 45nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
