TSF2N60M
Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
Key Features
- 2.0A, 600V, RDS(on) = 5.00 @VGS = 10 V
- Low gate charge ( typical 9nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D GDS TO-220 GD S TO-220F
