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TSF60R150WT - N-Channel MOSFET

Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 650V @TJ = 150 ℃.
  • Max. RDS(on) = 0.15Ω.
  • Ultra Low gate charge (typ. Qg = 41nC).
  • 100% avalanche tested Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) 600 22.0.
  • 13.9.
  • IDM Drain Current.
  • Pulsed (Note 1) 60.
  • VGSS Gate-Source voltage ±30 EAS PD TJ, TSTG TL Si.

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Datasheet Details

Part number TSF60R150WT
Manufacturer Truesemi
File Size 458.53 KB
Description N-Channel MOSFET
Datasheet download datasheet TSF60R150WT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSF60R150WT 600V 22A N-Channel SJ-MOSFET TSF60R150WT 600V 22A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • 650V @TJ = 150 ℃ • Max. RDS(on) = 0.15Ω • Ultra Low gate charge (typ.
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