Datasheet Details
| Part number | TSF730M |
|---|---|
| Manufacturer | Truesemi |
| File Size | 264.78 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 TSF730M Datasheet
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Description
This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.
Features
- 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V.
- Low gate charge ( typical 18nC).
- Fast wsitching.
- 100% avalanche tested.
- Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
- ◀▲ {G.
- {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pul.