Truesemi TSF830M
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.| Part No. | TSF830M |
|---|---|
| Datasheet | TSF830M Download |
| Manufacturer |  Truesemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.FEATURES
● 5.0A,500V,Max.RDS(on)=1.50 Ω @ VGS =10V● Low gate charge(typical 20nC)
● High ruggedness
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
ABSOLUTE MAXIMUM RATINGS
TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (N
