Datasheet4U Logo Datasheet4U.com

TSF830M - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 5.0A,500V,Max. RDS(on)=1.50 Ω @ VGS =10V.
  • Low gate charge(typical 20nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalan.

📥 Download Datasheet

Datasheet preview – TSF830M

Datasheet Details

Part number TSF830M
Manufacturer Truesemi
File Size 346.60 KB
Description N-Channel MOSFET
Datasheet download datasheet TSF830M Datasheet
Additional preview pages of the TSF830M datasheet.

📁 Similar Datasheet

Other Datasheets by Truesemi

Full PDF Text Transcription

Click to expand full text
TSP830M/TSF830M TSP830M/TSF830M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 5.0A,500V,Max.RDS(on)=1.
Published: |