TSF8N60M Datasheet | Truesemi

Features - 7.5A,600v,RDS(on)=1.2Ω@VGS=10V - Gate charge (Typical 30n C) - High ruggedness - Fast switching - 100% Avalanche Tested - Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings Symbol VDSS Drain to Source Voltage Continuous Drain Current(@TC = 25°C) ID Continuous Drain Current(@TC = 100°C) IDM VGS EAS EAR dv/dt Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) PD Derating Factor above 25 °C TSTG, TJ TL Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 1.21 -55 ~ 150 300 0.4 (Note 2) (Note 1) (Note 3) 165 (Note 1) 4.5 30 ±30 285 15.5 4.5 55 4.5- 30- A A V m J m J V/ns W W/°C °C °C 7.5 Parameter TSP8N60M 600 7.5- Units Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ Thermal Resistance, Junction-to-Ambient TSP8N60M 0.85 0.5 62.5 2.2 -62.5 Units °C/W °C/W °C/W 1/7 TSP8N60M/TSF8N60M Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS /Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current VDS = 480V, TC = 125 °C Gate-Source Leakage, Forward IGSS Gate-source Leakage, Reverse VGS = -30V, VDS = 0V ---100 n A VGS = 30V, VDS = 0V ----100 100 u A n A VGS = 0V, ID = 250u A ID = 250u A, referenced to 25 °C VDS = 600V, VGS = 0V 600 ---0.57 ---10 V V/°C u A ( TC = 25 °C unless otherwise noted ) Test...