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TSP10N60S - N-Channel MOSFET

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.42Ω.
  • Ultra Low Gate Charge (typ. Qg = 35nC).
  • 100% avalanche tested.
  • Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSB10N60S 9.5.
  • 8.
  • IDM Drain Current - Pulsed (Note 1) 40.
  • VGSS Gate-Source voltage EAS.

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Datasheet Details

Part number TSP10N60S
Manufacturer Truesemi
File Size 934.89 KB
Description N-Channel MOSFET
Datasheet download datasheet TSP10N60S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSP10N60S / TSF10N60S/TSB10N60S 600V N-Channel MOSFET September, 2013 SJ-FET TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency. Features • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.42Ω • Ultra Low Gate Charge (typ.