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TSP5N60M - 600V N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excel

Features

  • 4.5A,600v,RDS(on)=2.2Ω@VGS=10V.
  • Gate charge (Typical 17nC).
  • High ruggedness.
  • Fast switching.
  • 100% AvalancheTested.
  • Improved dv/dt capability General.

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Datasheet Details

Part number TSP5N60M
Manufacturer Truesemi
File Size 672.54 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet TSP5N60M Datasheet

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www.DataSheet4U.net TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V ■ Gate charge (Typical 17nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics.
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