Datasheet Summary
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TSP5N60M/TSF5N60M
600V N-Channel MOSFET
Features
- 4.5A,600v,RDS(on)=2.2Ω@VGS=10V
- Gate charge (Typical 17nC)
- High ruggedness
- Fast switching
- 100% AvalancheTested
- Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and...