TSP60R190S1
TSP60R190S1 is N-Channel MOSFET manufactured by Truesemi.
Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
Features
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.16Ω
- Ultra Low gate charge (typ. Qg = 70n C)
- 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche...
