Truesemi TSP730M
This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.| Part No. | TSP730M |
|---|---|
| Datasheet | TSP730M Download |
| Manufacturer |  Truesemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.FEATURES
● 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V● Low gate charge ( typical 18nC)
● Fast wsitching
● 100% avalanche tested
● Improved dv/dt capability {D GDS TO-220 GD S TO-220F
● ◀▲ {G
●
● {S
ABSOLUTE MAXIMUM RATINGS
TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche En
