TSP730M Overview
This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br...
TSP730M Key Features
- 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V
- Low gate charge ( typical 18nC)
- Fast wsitching
- 100% avalanche tested
- Improved dv/dt capability