TSP730M Datasheet | Truesemi

Description This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features - 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V - Low gate charge ( typical 18n C) - Fast wsitching - 100% avalanche tested - Improved dv/dt capability {D TO-220 GD S TO-220F - ◀▲ {G - - {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche...