TSU1N60M
Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
Key Features
- 1.0A,600V,Max.RDS(on)=11.5 Ω @ VGS =10V
- Low gate charge(typical 5.2nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
