TSU60R700WT Key Features
- 600V @TJ = 25 ℃
- Typ. RDS(on) = 0.63Ω
- Ultra Low gate charge (typ. Qg = 12nC)
- 100% avalanche tested
- Part: TSU60R700WT
- Manufacturer: Truesemi
- Size: 424.22 KB
Related Truesemi Datasheets
| Part Number | Description |
|---|---|
| TSU60R2K3S1 | N-Channel MOSFET |
| TSU60R580WT | N-Channel MOSFET |
| TSU60R650S1 | N-Channel MOSFET |
| TSU60R850S1 | N-Channel MOSFET |
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TSU60R700WT Description
Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power...