Datasheet4U Logo Datasheet4U.com

4946 - Dual N-Channel MOSFET

Features

  • RDS(on) (mΩ) Max 52 @ VGS = 10V P.
  • Super high dense cell trench design for low RDS(on).
  • Rugged and reliable.
  • Surface Mount package. 5.0A 60V 4.0A 75 @ VGS = 4.5V P D1 D2 SOP-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 S2 G1 G2.

📥 Download Datasheet

Datasheet Details

Part number 4946
Manufacturer TuoFeng
File Size 149.39 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet 4946 Datasheet

📁 Similar Datasheet

Other Datasheets by TuoFeng

    Full PDF Text Transcription

    Click to expand full text
    Shenzhen TuoFeng Semiconductor Technology co., LTD 4946 Dual N-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID FEATURES RDS(on) (mΩ) Max 52 @ VGS = 10V P ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. 5.0A 60V 4.0A 75 @ VGS = 4.5V P D1 D2 SOP-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 S2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD Limit 60 ± 20 5.0 26 3.1 2.0 1.2 Unit V V A A A W TA=25ºC TA=75ºC Avalanche Energy with Single Pulse L=0.
    Published: |