TuoFeng 4946
Dual N-Channel MOSFET
| Part No. | 4946 |
|---|---|
| Datasheet | 4946 Download |
| Manufacturer | TuoFeng |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
RDS(on) (mΩ) Max 52 @ VGS = 10V P●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package. 5.0A 60V 4.0A 75 @ VGS = 4.5V P D1 D2 SOP-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 S2 G1 G2
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD Limit 60 ± 20 5.0 26 3.1 2.0 1.2 Unit V V A A A W TA=25ºC TA=75ºC Avalanche Energy with Single Pulse L=0.1mH EAS TJ,TSTG 11 - 55 to 150 mJ °C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. a RthJA 62.5 °C/W ： 1 Shenzhen Tuofeng Semiconductor Technology co., LTD 4946ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted) Param...
