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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2026
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.056 at VGS = - 4.5 V - 20 0.069 at VGS = - 2.5 V
0.086 at VGS = - 1.8 V
ID (A) - 3.2
- 2.8 - 2.3
TO-236 (SOT-23)
G1 S2
3D
Top View 2026
*Marking Code:262TF
FEATURES Power MOSFETs: 1.8 V Rated
Pb-free Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25 °C
IDM IS
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit - 20 ± 12
- 3.2
-12 - 1.6 1.
2026 Datasheet
