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4401 - P-Channel MOSFET

Datasheet Summary

Description

The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -6.1 -5.1 -60 3 2.1 -55 to 150 Ther.

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Datasheet Details

Part number 4401
Manufacturer Tuofeng Semiconductor
File Size 185.96 KB
Description P-Channel MOSFET
Datasheet download datasheet 4401 Datasheet
Additional preview pages of the 4401 datasheet.

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Full PDF Text Transcription

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4401 4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.
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