4410 - N-Channel MOSFET

Features

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Lead free product is acquired.
Surface mount Package.
SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC IDM Drain Current (Pulsed) a PD Total Power Dissipation @TA=25oC Tj, Tstg Operating Junction and Storage Temperature Range RqJA Thermal Resistance Junction to Ambient.

Tuofeng Semiconductor

Datasheet Details

Part number	4410
Manufacturer	Tuofeng Semiconductor
File Size	171.08 KB
Description	N-Channel MOSFET
Datasheet	4410 Datasheet
Additional preview pages of the 4410 datasheet.

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Full PDF Text Transcription

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Shenzhen Tuofeng Semiconductor Technology co., LTD N-Channel Enhancement-Mode MOSFET (30V, 10A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 30V 10A 13.5 @ VGS = 10V ,ID=10A 20 @ VGS = 4.5V,ID=5A 4410 Features · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · Surface mount Package · SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC IDM Drain Current (Pulsed) a PD Total Power Dissipation @TA=25oC Tj, Tstg Operating Junction and Storage Temperature Range RqJA Thermal Resistance Junction to Ambient a: Repetitive Rating: Pulse width limited by the maximum junction temperation.

Published: Aug 28, 2016 |