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4612 - MOSFET

Features

  • n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 55mΩ (VGS=10V) < 60mΩ (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 80m Ω (VGS = -10V) < 95m Ω (VGS = -4.5V) D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 G2 S2 n-channel G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current A TA=25°C ID 4.5 Pulsed Drain Current B IDM 20 Max p-ch.

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Datasheet Details

Part number 4612
Manufacturer Tuofeng Semiconductor
File Size 369.02 KB
Description MOSFET
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Full PDF Text Transcription

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4612 Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 55mΩ (VGS=10V) < 60mΩ (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 80m Ω (VGS = -10V) < 95m Ω (VGS = -4.5V) D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 G2 S2 n-channel G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current A TA=25°C ID 4.5 Pulsed Drain Current B IDM 20 Max p-channel -60 ±20 -3.
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