Datasheet Details
| Part number | 4835 |
|---|---|
| Manufacturer | Tuofeng Semiconductor |
| File Size | 138.44 KB |
| Description | P-Channel MOSFET |
| Download | 4835 Download (PDF) |
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Overview: Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 P-Channel Enhancement Mode.
| Part number | 4835 |
|---|---|
| Manufacturer | Tuofeng Semiconductor |
| File Size | 138.44 KB |
| Description | P-Channel MOSFET |
| Download | 4835 Download (PDF) |
|
|
|
• -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO − 8 S SS • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G DD DD P-Channel MOSFET Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous TA = 25°C Maximum Drain Current – Pulsed -30 V ±25 -8 A -50 *Surface Mounted on FR4 Board, t ≤ 10 sec.
TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
1 Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) Symbol PD TJ TSTG RθJA Parameter Maximum Power Dissipation Maximum Junction Temperature TA = 25°C TA = 100°C Storage Temperature Range Thermal Resistance - Junction to Ambient Rating 2.5 1 150 -55 to 150 50 Unit W °C °C/W Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Test Condition Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VGS=0V, ID= -250µA VDS= -30V, VGS=0V VDS=VGS, ID= -250µA VGS= ±25V , VDS=0V RDS(ON) Drain-Source On-state Resistance b VGS= -10V, ID= -8A VGS= -4.5V, ID= -5A VSD Diode Forward Voltage b ISD= -3A, VGS=0V Dynamica Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacit
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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4835GM | P-Channel 30V MOSFET | VBsemi |
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4835P | AF4835P | Anachip Corporation |
| Part Number | Description |
|---|