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4835 - P-Channel MOSFET

Description

-30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO 8 S SS Power Management in Notebook Computer, Portab

Features

  • Pin.

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Datasheet Details

Part number 4835
Manufacturer Tuofeng Semiconductor
File Size 138.44 KB
Description P-Channel MOSFET
Datasheet download datasheet 4835 Datasheet
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    Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO − 8 S SS • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G DD DD P-Channel MOSFET Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous TA = 25°C Maximum Drain Current – Pulsed -30 V ±25 -8 A -50 *Surface Mounted on FR4 Board, t ≤ 10 sec.
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