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8820 - Dual N-Channel MOSFET

Datasheet Summary

Description

The 8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Features

  • VDS (V) = 20V ID = 6A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.5V) D1/D2 S1 S1 G1 TSSOP-8 Top View 18 27 36 45 D1/D2 S2 S2 G2 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±10 7 25 1.5 0.96 -55 to 150 D2.

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Datasheet Details

Part number 8820
Manufacturer Tuofeng Semiconductor
File Size 171.69 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet 8820 Datasheet
Additional preview pages of the 8820 datasheet.

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Full PDF Text Transcription

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8820 8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The 8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product 8820 is Pb-free (meets ROHS & Sony 259 specifications). 8820 is a Green Product ordering option. 8820 is electrically identical. Features VDS (V) = 20V ID = 6A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.
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