8822 - Dual N-Channel MOSFET

Datasheet Summary

Description

The 8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.5V) TSSOP-8 Top View D1 D2 D1/D2 S1 S1 G1 1 2 3 4 8 D1/D2 7 S2 6 S2 5 G2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±10 6 30 1.5 0.96 -55 to.

Tuofeng Semiconductor

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Datasheet Details

Part number	8822
Manufacturer	Tuofeng Semiconductor
File Size	92.50 KB
Description	Dual N-Channel MOSFET
Datasheet	8822 Datasheet
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8820 - Dual N-Channel MOSFET

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8822 8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The 8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product 8822 is Pb-free (meets ROHS & Sony 259 specifications). 8822 is a Green Product ordering option. 8822 is electrically identical. Features VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.

Published: Aug 28, 2016 |