Datasheet4U Logo Datasheet4U.com

FDMA905 - P-Channel Enhancement Mode Power MOSFET

Description

The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

  • VDS = -12V,ID = -6.7A RDS(ON) < 27mΩ @ VGS=-2.5V RDS(ON) < 21mΩ @ VGS=-4.5V D G S Schematic diagram.
  • Advanced trench MOSFET process technology.
  • Ultra low on-resistance with low gate charge.

📥 Download Datasheet

Datasheet Details

Part number FDMA905
Manufacturer Tuofeng Semiconductor
File Size 300.61 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet FDMA905 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMA905P Single P-Channel PowerTrench MOSFET Fairchild Semiconductor
FDMA905P P-Channel MOSFET ON Semiconductor
FDMA908PZ MOSFET Fairchild Semiconductor
FDMA908PZ P-Channel MOSFET ON Semiconductor
FDMA910PZ MOSFET Fairchild Semiconductor

Other Datasheets by Tuofeng Semiconductor

Part Number Description

Full PDF Text Transcription

Click to expand full text
Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDMA905 NCE P-Channel Enhancement Mode Power MOSFET Description The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -6.7A RDS(ON) < 27mΩ @ VGS=-2.5V RDS(ON) < 21mΩ @ VGS=-4.
Published: |