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MBR10200CT - SCHOTTKY BARRIER DIODE

Key Features

  • zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection，High reliability zRoHS product TO-22OHF TO-22OF 1/6 Shenzhen Tuofeng Semiconductor Technology Co. , Ltd.

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Datasheet Details

Part number MBR10200CT
Manufacturer Tuofeng Semiconductor
File Size 453.83 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet MBR10200CT Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SCHOTTKY BARRIER DIODE MBR10200CT MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22OC z z， z z， z（RoHS） FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection，High reliability zRoHS product TO-22OHF TO-22OF 1/6 Shenzhen Tuofeng Semiconductor Technology Co.