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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
S9015LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: -0.1 Collector-base voltage
A
V(BR)CBO:
-50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -100µA, IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -0.