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S9015LT1 - PNP Transistor

Datasheet Summary

Features

  • Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.1 Collector-base voltage A V(BR)CBO: -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 1. BASE 2.

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Datasheet Details

Part number S9015LT1
Manufacturer Tuofeng Semiconductor
File Size 83.39 KB
Description PNP Transistor
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.1 Collector-base voltage A V(BR)CBO: -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -50 Collector-emitter breakdown voltage V(BR)CEO Ic= -0.
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