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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Si2328 N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.300 @ VGS = 10 V
ID (A)
1.5
(SOT-23)
G1 S2
3D
Top View Si2328DS (D8)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage Gate-Source Voltage
VDS
100
VGS
"20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a
TA= 25_C
ID
IDM
IAS L = 0.1 mH
EAS
IS
1.5
1.15
6 6 1.8 0.6
Power Dissipationa Operating Junction and Storage Temperature Range
TA= 25_C
PD TJ, Tstg
1.25
0.
Si2328 Datasheet
