Tuofeng Si2328
N-Channel MOSFET
| Part No. | Si2328 |
|---|---|
| Datasheet | Si2328 Download |
| Manufacturer |  Tuofeng |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage VDS 100 VGS "20 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a TA= 25_C ID IDM IAS L = 0.1 mH EAS IS 1.5 1.15 6 6 1.8 0.6 Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C PD TJ, Tstg 1.25 0.73 –55 to 150 Unit V A mJ A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 80 130 45 Maximum 100 170 55 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2328 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS...
