Datasheet Summary
Turbo IC, Inc.
HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
Features
:
- 120 ns Access Time
- Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes
- Fast Write Cycle Times Byte or Page Write Cycles: 10 ms Time to Rewrite plete Memory: 1.25 sec Typical Byte Write Cycle Time: 160 µsec
- Software Data Protection
- Low Power Dissipation 50 mA Active Current 200 µA CMOS Standby Current
- Direct Microprocessor End of Write Detection Data Polling
- High Reliability CMOS Technology with Self Redundant EEPROM Cell Endurance: 100,000 Cycles Data Retention: 10 Years
- TTL and CMOS patible Inputs and Outputs
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