Click to expand full text
M.tec
2M x 16Bit x 4 Banks synchronous DRAM
TTS3816B4E
GENERAL DESCRIPTION
The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system www.DataSheet4U.com applications.
FEATURES
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four-banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -.
TTS3816B4E Datasheet
