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DU1215S - RF MOSFET Power Transistor

Features

  • l l l l l l DU1215S N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt.

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Datasheet Details

Part number DU1215S
Manufacturer Tyco Electronics
File Size 202.98 KB
Description RF MOSFET Power Transistor
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RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz Features l l l l l l DU1215S N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications . w Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance C ISS C OSS 9.5 60 - 50 60 pF pF pF dB % - VD,=12.0 V, F=l .O MHz V&2.0 V&2.0 V, F=l .OMHz V, F=l .OMHz Gss GP % VSWR-T 12 3O:l V,,=12.0 V, lDcl=lOO mA. PO*1 5 W, F=175 MHz VD,=12.0 V, l&O0 mA, PO,=15 W, F=175 MHZ VDD=12.0 V, I,,=100 mA, PO,=15 W, F=l75 MHz Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel.
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