• Part: DU2840S
  • Description: RF MOSFET Power Transistor
  • Category: MOSFET
  • Manufacturer: Tyco Electronics
  • Size: 188.42 KB
Download DU2840S Datasheet PDF
Tyco Electronics
DU2840S
DU2840S is RF MOSFET Power Transistor manufactured by Tyco Electronics.
Features Power Transistor, 4OW,28V N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Parameter Drain-Source Gate-Source Drain-Source Voltage Voltage Current 1 1 Symbol V DS V GS ‘0s PD T, T STG 8 JC 1 ( Rating 65 20 Units V V 1 - W “C “C 1 125 200 -55 to +150 1.4 Power Dissipation Junction Temperature Storage Temperature Thermal Resistance .970 .980 B i 18.29 t 18.54 1 ,720 1 ,730 “Ci W &22 564 292 6.48 5.79 3.30 -373 .245 ,222 .115 ,393 255 E28 .I30 F m G Electrical Characteristics Parameter Drain-Source I~~~ Drain-Source Gate-Source Breakdown Voltage at 25°C ) ) Symbol BV,,, ‘DSS ’05s V GSrn HI GM C 15s C 055 1 Min 1 55 1 Max 1 2.0 2.0 ( Units ) V m A p A V S p F p F p F 1 d B % - ) ) V,,=O.OV, V,,=28.0 v,,=20.0 V,,=l O.O V,,=l O.O V,=28.0 V,,=28.0 V,,=28.0 1 V,,=28.0 V,,=28.0 V,,=28.0 l,,=l O.Om A V, V,,=O.O V Test Conditions Leakage Current Leakage Current v, v,,=o.o v Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Specifications 2.0...