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an AMP company
RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications . .
DUI 230s
Absolute Maximum Ratings at 25°C
Parameter 1 Symbol 1 Rating 1 Units 1
Drain-SourceVoltage Gate-Source Voltage Drain-Source Current 1 Power Dissipation Junction Temperature Storage Temperature Thermal Resistance I
VDS V0s ‘Ds PO TJ I
40 20 8 175 200 -55to+150
V V A
I w I
“C “C
I
T STG
BJCI
1
I “C/w I
1
E
F
G
1 6.22
1 6.48
1 245 222 1 .llS
1 255 22s 1 ,130
1
5.64
1 2.92 1
5.79
3.
DUI230S Datasheet
