Datasheet4U Logo Datasheet4U.com

FH2164 - RF MOSFET Power Transistor/ 8W/ 12V 30 - 90 MHz

Key Features

  • l l l l l l FH2164 N-Channel Enhancement Mode Device Meets CECOM Drawing A3012715 Designed for Frequency Hopping Systems 30-90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices Electrical Characteristics at 25°C VD,=28.0 V, F=l . O MHz’ Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance.
  • Per side Specifications Subject to Change Without Notice. C ass C RSS GP 90 VSWR-T 13 55 - 40 pF PF V,,=28.0 V,,=28.0 V,.

📥 Download Datasheet

Full PDF Text Transcription for FH2164 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FH2164. For precise diagrams, and layout, please refer to the original PDF.

* an AMP company ;=-=z 7=-z = ---== =z .-----= = = RF MOSFET Power Transistor, SW, 12V 30 - 90 MHz Features l l l l l l FH2164 N-Channel Enhancement Mode Device Meets CEC...

View more extracted text
eatures l l l l l l FH2164 N-Channel Enhancement Mode Device Meets CECOM Drawing A3012715 Designed for Frequency Hopping Systems 30-90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices Electrical Characteristics at 25°C VD,=28.0 V, F=l .O MHz’ Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per side Specifications Subject to Change Without Notice. C ass C RSS GP 90 VSWR-T 13 55 - 40 pF PF V,,=28.0 V,,=28.0 V, F=l .O MHz’ V, F=l .O MHz’ mA, P,,.r=8.0 W, F=88 MHz W, F=88 MHz W, F=88 MHz 8 2O:l dB % - VD,=12.0 V, l&j00 V,,=12.0 V,,=12.0 V, l,Q=6

More Datasheets from Tyco Electronics (now TE Connectivity)

Part Number Description
FH2114 RF MOSFET Power Transistor