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FH2164 - RF MOSFET Power Transistor/ 8W/ 12V 30 - 90 MHz

Features

  • l l l l l l FH2164 N-Channel Enhancement Mode Device Meets CECOM Drawing A3012715 Designed for Frequency Hopping Systems 30-90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices Electrical Characteristics at 25°C VD,=28.0 V, F=l . O MHz’ Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance.
  • Per side Specifications Subject to Change Without Notice. C ass C RSS GP 90 VSWR-T 13 55 - 40 pF PF V,,=28.0 V,,=28.0 V,.

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Datasheet Details

Part number FH2164
Manufacturer Tyco Electronics
File Size 90.38 KB
Description RF MOSFET Power Transistor/ 8W/ 12V 30 - 90 MHz
Datasheet download datasheet FH2164 Datasheet
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* an AMP company ;=-=z 7=-z = ---== =z .-----= = = RF MOSFET Power Transistor, SW, 12V 30 - 90 MHz Features l l l l l l FH2164 N-Channel Enhancement Mode Device Meets CECOM Drawing A3012715 Designed for Frequency Hopping Systems 30-90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices Electrical Characteristics at 25°C VD,=28.0 V, F=l .O MHz’ Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per side Specifications Subject to Change Without Notice. C ass C RSS GP 90 VSWR-T 13 55 - 40 pF PF V,,=28.0 V,,=28.0 V, F=l .O MHz’ V, F=l .O MHz’ mA, P,,.r=8.0 W, F=88 MHz W, F=88 MHz W, F=88 MHz 8 2O:l dB % - VD,=12.0 V, l&j00 V,,=12.0 V,,=12.0 V, l,Q=600 mA, P,,,=8.0 V, 1,0=600 mA, P0,e8.
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