LF2805A Datasheet | Tyco Electronics

Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation mon Source Configuration Lower Noise Floor App Iications . - Broadband Linear Operation 500 MHz to 1400 MHz Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Symbol BV,,, ‘Dss IGSS VGSCTW GM C ISS Coss CRSS GP ‘1D VSWR-T 10 50 2.0 Min 65 - Max 1.0 1.0 Units V m A p-4 V lest Conditions V,,=O.O V, 1,,=2.0 m A V,,=28.0 V, V,,=O.O V v,,=20 v, v,,=o.o v V&O.0 V&O.0 V&8.0 V, l,,=l O.O m A V, i&00.0 m A, AVGs=l .O V, 80 us Puke 7 m S PF PF p F V, F-l.0 MHz V,,=28.0 V, F-1 .OMHz V,,=28.0 V, F=l .O MHz V,,d8.0 V, I,,=50 m A, PO,+0 W, F=l .O GHz W, F=l .OGHz 2O:l d B % - V,,=28.0 V, I,,=50 m A, P,s5.0 V,,=28.0 V, I,,=50 m A, P,&%O W, F=l .OGHz RF MOSFET Power Transistor, 5W, 28V LF2805A v2.00 Typical Broadband Performance Curves POWER OUTPUT 7 6 - CAPACITANCES 7 vs VOLTAGE vs VOLTAGE m A F=l .O MHz F=l .O GHz P,,=O.5 W I,,=50 GAIN vs FREQUENCY V,,=28 EFFICIENCY W V,,=28 vs FREQUENCY m A P,,=5.0 W V I,,=50 m A P0,,=5.0 V...