MA4AGSW5 Datasheet | Tyco Electronics

Features n n n MA4AGSW5 Layout n n n n Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 d B Insertion Loss, 30 d B Isolation at 50 GHz Low Current sumption. -10 m A for low loss state +10 m A for Isolation state M/A-’s unique patent pending Al Ga As hetero-junction anode technology. Silicon Nitride Passivation Polyamide Scratch protection Description M/A-’s MA4AGSW5 is an Aluminum-Gallium- Arsenide anode enhanced, SP5T PIN diode switch. Al Ga As anodes, which utilize M/A-’s patent pending hetero-junction technology, produce less loss than conventional Ga As processes, by as much as 0.3 d B reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. Absolute Maximum Ratings1 @ T= Room Temp. (Unless otherwise specified) Parameter Operating Temperature Storage Temperature RF C.W. Incident Power Breakdown Voltage Bias Current Maximum Rating -55 °C to +125 °C -65 °C to +150 °C + 23 d Bm C. W. 25 V +/- 30 m A per Diode Applications The low capacitance of the PIN diodes makes this device ideal for use in microwave multi-throw switch designs. The low series resistance of the diodes reduces the insertion loss of the devices at microwave/millimeter-wave frequencies. These Al Ga As PIN switches are used as switching arrays on radar systems, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. 1. Exceeding any of these values may result in permanent damage Al Ga As SP5T Reflective PIN Diode Switch Electrical Specifications @ 25 °C (On-Wafer Measurements) RF...