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AlGaAs SP5T Reflective PIN Diode Switch
V 1.00
MA4AGSW5
Features
n n n
MA4AGSW5 Layout
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Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology. Silicon Nitride Passivation Polyamide Scratch protection
Description
M/A-COM’s MA4AGSW5 is an Aluminum-Gallium- Arsenide anode enhanced, SP5T PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as 0.3 dB reduction in insertion loss at 50 GHz.