MA4BN1840-1 Datasheet | Tyco Electronics

Features n n n n n MA4BN1840-1 Chip Layout Broad Bandwidth Specified from 18 to 40 GHz Useable from 10 GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4BN1840-1 device is a fully monolithic broadband bias network utilizing M/A-'s HMIC TM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form vias by imbedding them in low loss, low dispersion glass in addition to High Q spiral Inductors and MIM capacitors. By using small spacing between elements, this bination of silicon and glass gives HMIC devices low loss and high performance with exceptional repeatability through millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metalization allows for manual or automatic die attach via 80Au/20Sn or Sn62/Pb36/Ag2 solders or electrically conductive silver epoxy. .. Applications The MA4BN1840-1 millimeter frequency bias network is suitable for D.C. biasing PIN Diode control circuits as a RF-DC de-coupling network and as a D.C. Return network. The device can also be used as a bi-directional re-active coupler for schottky detector circuits. D.C. currents up to 150 m A and D.C. voltages up to 50 V may be used. Absolute Maximum Ratings1 @ TA = +25 °C (Unless otherwise specified) Parameter Operating Temperature Storage Temperature Die Attach Temperature RF C.W. Incident Power D.C. Bias Current D.C. Bias Voltage Value -65 °C to +125 °C -65 °C to +150 °C 320 °C for 20 sec 10 Watts +/- 150 m A +/- 50 V 1. Exceeding any of these values may result in permanent damage Monolithic HMIC Integrated Bias Network 18 - 40 GHz Electrical Specifications @ TA = 25 °C (On-Wafer Measurements) Parameter Insertion Loss RF - DC Isolation Input Return Loss Output Return Loss V 1.00 Frequency Minimum Value 18-40 GHz 18-40 GHz 18-40 GHz 18-40 GHz 30 30...