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MA4E1318 - (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes

This page provides the datasheet information for the MA4E1318, a member of the MA4E1317 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes family.

Datasheet Summary

Description

M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes.

Features

  • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317.

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Datasheet preview – MA4E1318

Datasheet Details

Part number MA4E1318
Manufacturer Tyco Electronics
File Size 186.89 KB
Description (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
Datasheet download datasheet MA4E1318 Datasheet
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Full PDF Text Transcription

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GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317 Description and Applications M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.
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