MA4E1319-1 Datasheet | Tyco Electronics

GaAs Flip Chip Schottky Barrier Diodes Features - - - - - - Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1 MA4E1317 Description and Applications M/A-'s MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for...