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MA4GP907 - GaAs Flip-Chip PIN Diodes

Description

M/A-COM's MA4GP907 is a Gallium Arsenide Flip-Chip PIN diode.These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.

The diodes exhibit an extremely low RC Product, ( 0.1 ps ) and 2 nS switching characteristics.

Features

  • n n n n n n n Package Outline Top View Is Shown With Diode Junction Up Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation Polyimide Scratch Protection Cathode.

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Full PDF Text Transcription

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www.DataSheet4U.com GaAs Flip-Chip PIN Diodes V 5.00 MA4GP907 Features n n n n n n n Package Outline Top View Is Shown With Diode Junction Up Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation Polyimide Scratch Protection Cathode Description M/A-COM's MA4GP907 is a Gallium Arsenide Flip-Chip PIN diode.These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps ) and 2 nS switching characteristics. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection.
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