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MA4SW410B-1 - SP4T PIN Diode

General Description

The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310.

Key Features

  • n n n n Outline Drawing Broad Bandwith Specified from 2 to 18 GHz Integrated D. C. Bias Network Exceptional Isolation to Loss Ratio Rugged, Fully Monolithic, Glass Encapsulated Construction.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SP4T PIN Diode with Integrated Bias Network V 2.00 MA4SW410B-1 Features n n n n Outline Drawing Broad Bandwith Specified from 2 to 18 GHz Integrated D.C. Bias Network Exceptional Isolation to Loss Ratio Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies.