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MA4SW610B-1 - SP6T PIN Diode Switch

General Description

The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band switch with integrated bias networks made with M/A-COM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310.

Key Features

  • n n n V 1.00 MA4SW610B-1 MA4SW510B-1 Layout Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction.

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www.DataSheet4U.com SP6T PIN Diode Switch with Integrated Bias Network Features n n n V 1.00 MA4SW610B-1 MA4SW510B-1 Layout Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band switch with integrated bias networks made with M/A-COM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through 18 GHz.