MAAP-008171 Datasheet | Tyco Electronics

Features - Ideal for Wi Max, MESH Network, and Linear Applications - Small Signal Gain: 11 d B Typical - EVM: 2.5% at 30 d Bm Linear (OFDM) POUT - Includes thermally-coupled reference FET for use in external biasing circuit - Lead-Free 4 mm 16 lead PQFN Package - 100% Matte Tin Plating over Copper - Halogen-Free “Green” Mold pound - Ro HS- pliant and 260°C Reflow patible Description M/A-'s MAAP-008171 is an unmatched high power Ga As p HEMT which exhibits high gain and linearity performance in a lead-free 4mm PQFN 16Lead surface mount plastic package. This part is tunable over a frequency range from 600 MHz to 4000 MHz making it ideal many linear applications such as CDMA, WCDMA, and Wi Max. This part can achieve 27 d Bm /30 d Bm Linear Pout when measured for 802.16d (EVM < 2.5%) when operated @ 12V. It also contains a thermallycoupled reference transistor to allow simple current mirror biasing. The MAAP-008171 is fabricated using a high reliability Ga As PHEMT process to realize low current and high power functionality. The process features full passivation for increased performance and reliability. Pin Configuration Pin No. 1 2 3 4 5-8 9-12 13-16 17 Pin Name Sense_S Sense_D Sense_G N/C RFIN N/C RFOUT Paddle Description Source of Reference Device Drain of Reference Device Gate of Reference Device No Connection RF Input/Gate Bias No Connection RF Output/Drain Bias RF & DC Ground 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. Ordering Information 1 Part Number MAAP-008171-TR3000 MAAP-008171-001SMB MAAP-008171-002SMB MAAP-008171-003SMB MAAP-008171-004SMB Absolute Maximum Ratings 3,4 Package 3000 piece reel Parameter Input Power Operating Supply Voltage Gate Voltage Operating Temperature Channel Temperature Storage Temperature Absolute Maximum + 32 d Bm +12.0 Volts +1 Volts -30 °C to +85 °C +150 °C -40 °C to +150 °C 900 MHz Sample Test Board (Includes 5 Samples) 1.9 GHz Sample Test Board (Includes 5 Samples) 2.5 GHz Sample...