MAAPGM0078-DIE Datasheet | Tyco Electronics

.. Amplifier, Power, 12W 2.0-6.0 GHz Features - 12 Watt Saturated Output Power Level - Variable Drain Voltage (8-10V) Operation - MSAG™ Process Rev B Preliminary Datasheet Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-’s repeatable, high performance and highly reliable Ga As Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance pliance. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications - - - - Also Available in: Description Part Number Ceramic Package MAAP-000078-PKG001 Sample Board (Die) MAAP-000078-SMB004 Radio munications Sat Radar EW Mechanical Sample (Die) MAAP-000078-MCH000 Sample Board (Pkg) MAAP-000078-SMB001 Electrical Characteristics: TB = 55°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 2.8A2, Pin = 24 d Bm, RG=30 Ω Parameter Bandwidth Output Power 1-d B pression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Gate Current Drain Current, under RF Drive 2nd Harmonic (4 GHz) 2nd Harmonic (6 GHz) 1. 2. Symbol f POUT P1d B G PAE VSWR VSWR IGG IDD 2f 2f Typical 2.0-6.0 41 40 20 28 1.4:1 2.3:1 30 4.1 30 67 m A A d Bc d Bc Units GHz d Bm d Bm d B % TB = MMIC Base Temperature Adjust VGG between - 2.6 and - 1.5V to achieve specified Idq. M/A- Inc. and its affiliates reserve the right to make...